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The E(c)-0.22 eV trap in Horizontal Bridgman undoped n-type GaAs may be passivated by contact with phosphoric acid for 8 hours at room temperature. Isochronal annealing, at around 250-degrees-C for 1 hour resulted in the partial recovery of this defect. The possible mechanisms of E(c)-0.22 eV trap passivation are proposed.

Passivation of a Bulk Defect Ec-0.22 eV in GaAs by Contact with Phosphoric Acid

Passivation of a Bulk Defect E_c-0.22 eV in GaAs by Contact with Phosphoric Acid