English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Influence of boundary conditions on the transport properties of a semiconductor device is presented. The boundary conditions are generated by convolution of the supply function and Lorentzian or Voigt profile. Transport characteristics are determined by solution of the kinetic equation within the relaxation time approximation. original DOI: 10.12693/APhysPolA.134.923 actual DOI: 10.12693/APhysPolA.134.1248 PACS/topics: 51.10.+y, 72.10.Bg, 72.80.Ey

Effect of Reservoirs on Transport Properties of Doped Structures Acta Physica Polonica A 134, 923 (2018), ERRATUM