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Poly(ethylene glycol dimethacrylate-co-1-vinyl-1,2,4-triazole/carbon nanotube, single-walled)/n-GaAs ((P(EGDMA-VTAZ)-CNSW)/n-GaAs) diode was fabricated by using surface polymerization method. Electrical properties were carried out at several temperatures. Dark current mechanisms were investigated by using current-voltage (I-V ) measurements. It was shown that the fabricated structure exhibited rectification behaviour that makes it a good candidate for electronic device applications. DOI: 10.12693/APhysPolA.130.206

Poly(ethylene glycol dimethacrylate-co-1-vinyl-1,2,4-triazole/ carbon nanotube, single-walled)/n-GaAs Diode Formed by Surface Polymerization