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Recently, the quantum spin Hall effect has been predicted in (111)-orientedthin films of SnSe and SnTe topological crystalline insulators. It was shownthat in these films the energy gaps in the two-dimensional band spectrum dependin an oscillatory fashion on the layer thickness -- the calculated topologicalinvariant indexes and edge state spin polarizations show that for films 20-40monolayers thick a two-dimensional topological insulator phase appears. Edgestates with Dirac cones with opposite spin polarization in their two branchesare obtained for both materials. However, for all but the (111)-oriented SnTefilms with an even number of monolayers an overlapping of bands in$\overline{\Gamma}$ and $\overline{\mathrm{M}}$ diminishes the final band gapand the edge states appear either against the background of the bands or withina very small energy gap. Here we show that this problem in SnSe films can beremoved by applying an appropriate strain. This should enable observation ofthe Quantum Spin Hall effect also in SnSe layers.

Quantum spin Hall effect in strained (111)-oriented SnSe layers