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In this work, several phenomena related to carbon ion implantation into Si(100) targets were simulated. The investigation was performed using Crystal-TRIM code (crystal-transport and range of ions in matter) under different conditions. In particular, we simulated the carbon profiles with respect to: (i) ions beam (energy, dose, orientation); (ii) substrate (temperature, crystallographic orientation). Two particular cases were taken into account: (i) implantation of 80 keV C to a fluence of 2.7 × 10 ion/cm at room temperature; (ii) implantation of 40 keV C to a fluence of 6.5 × 10 ion/cm at substrate temperature of 400 ◦C. For both cases, we used a tilt angle of 7◦. Several results were obtained and compared with the Rutherford backscattering spectroscopy and elastic recoil detection analysis results provided by literature.

Simulation of Carbon Ions Interactions with Monocrystalline Silicon Targets