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In uence of Defects Introduced by Irradiation with 4 9 MeV Helium Ions on Impedance of Silicon Diodes N.A. Poklonski, N.I. Gorbachuk, Vo Quang Nha, S.V. Shpakovski, V.A. Filipenya, V.A. Skuratov, T.N. Koatunowicz, N. Kukharchyk, H.-W. Becker and A. Wieck Belarusian State University, 4 Nezavisimosti Pr., BY-220030, Minsk, Belarus JSC INTEGRAL , 121A Kazintsa Str., BY-220108, Minsk, Belarus Joint Institute for Nuclear Research, 6 Joliot-Curie Str., RU-141980 Dubna, Russia Lublin University of Technology, Nadbystrzycka 38d, 20-618 Lublin, Poland Ruhr-University Bochum, 150 Universitaets Str., D-44780 Bochum, Germany

Influence of Defects Introduced by Irradiation with 4-9 MeV Helium Ions on Impedance of Silicon Diodes