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The defect build-up, structure recovery and lattice location of transition metals in ion bombarded and thermally annealed ZnO and GaN single crystals were studied by channeled Rutherford backscattering spectrometry and channeled particle-induced X-ray emission measurements using 1.57 MeV He ions. Ion implantation to a uence of 1.2× 10 ions/cm was performed using 120 keV Co and 120 keV Mn ions. Thermal annealing was performed at 800 ◦C in argon ow. Damage distributions were determined using the Monte Carlo McChasy simulation code. The simulations of channeled Rutherford backscattering spectra reveal that the ion implantation leads to formation of two types of defect structures in ZnO and GaN such as point and extended defects, such as dislocations. The concentrations of both types of defects are at a comparable level in both structures and for both implanted ions. Di erences between both implantations appear after thermal annealing where the Mn-doped ZnO reveals much better transition metals substitution and recovery e ect.

Channeling Study of Co and Mn Implanted and Thermally Annealed Wide Band-Gap Semiconducting Compounds