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Thin film series consisting of Ti, V, TiO2 and V2O5 layer with different layer geometries, sequences and thicknesses have been prepared by the sputtering technique. The hydrogen depth profile of selected films upon hydrogen charging at 1 bar and/or hydrogenation at pressure up to 102 bar was determined by using secondary ion mass spectrometry and nuclear reaction analysis using a N-15 beam. The highest hydrogen storage with a concentration up to 50 at.% was found in the pure Ti and Ti-contained layer, while it amounts to around 30% in the metallic Ti-V-Ni layer. Hydrogen can diffuse through the TiO2 layer without accumulation, but can be stored in the VO2 layer in some cases. Hydrogen can remove the preferential Ti orientation in the films and induce a complete transition of V2O5 into VO2 in the films.

Study of Ti, V and Their Oxides-Based Thin Films in the Search for Hydrogen Storage Materials