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A ternary semiconductor Ga1-xAlxP has been synthesized for the first time by hot implantation of aluminum in GaP. Two mixed crystals of various compositions have been synthesized when implanting by two different fluencies of aluminum ions. The identification of the above mentioned mixed semiconductors in the amorphous as well as in the crystalline phases has been carried out by the laser Raman spectroscopy. The synthesis of the ternary compositions has been carried out at different depths from the substrate surface by implantation of aluminum ions of various energies. Ga1-xAlxP synthesized by the ion implantation shows the behavior of twomode mixed semiconductors. The synthesized compounds are defective and the Raman spectra prove the fact. The share of disordered structure of the composition synthesized with high fluencies of aluminum ion implantation, 2.5 x 10(17) ion/cm(2), is especially big.

Laser Raman-Spectroscopy Identification of Ion-Synthesized Ternary Mixed Ga1-xAlxP in Amorphous and Crystalline Phases

Laser Raman-Spectroscopy Identification of Ion-Synthesized Ternary Mixed Ga_1-xAl_xP in Amorphous and Crystalline Phases