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The investigation of the electron and hole energies and probability densities is performed for the cases with and without the donor hyth-ogenic impurity placed into the centre of quantum dot quantum well structures with different thicknesses of layers. The oscillator strengths of intra- and interband quantum transitions in GaAs/AlxGa1-xAs core/shell/well/shell spherical quantum dot with ionized on-center donor impurity are estimated. The oscillator strengths of quantum transitions non-monotonously depend on the width of the layers due to the different location of carriers. The optimal geometrical parameters of the nanostructure are estimated for the possibility of multicolor light emission based on interband quantum transitions.

acta physica polonica. a

Oscillator Strengths of Quantum Transitions in Spherical Quantum Dot GaAs/AlxGa1-xAs/GaAs/AlxGa1-xAs with On-Center Donor Impurity