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Thermoelectric transport measurements were made on single crystal samples of Tl2GaInSe4. The crystal was prepared by a special design based on the Bridgman technique. Measurements of thermoelectric power were carried out in a special high vacuum-tight calorimeter when the direction of temperature gradient is perpendicular to the cleavage plane. The measurements covered a temperature range extending from 300 to 725 K. The results indicate P -type conductivity for our investigated samples. At room temperature the value of thermoelectric power was 735 μV/deg. The electron to hole mobility ratio was found to be 1.35. The e ective mass of holes at room temperature was evaluated as 4.635×10−29 kg, while for electron was equal to 8.468×10−31 kg. The relaxation time of majority and minority carriers was estimated as τp = 2.968×10−10 s and τn = 7.326×10−12 s, respectively. Also, the di usion coe cient of holes and electrons at room temperature was calculated and found to be 265.132 cm/s and 358.139 cm/s, respectively. The di usion length of holes and electrons are found to be Lp = 2.805× 10−4 cm and Ln = 5.122 × 10−5 cm. In addition to these pronounced parameters, the e ciency of thermoelectric element ( gure of merit) was evaluated which leads to better applications in many elds.

A Contribution of Thermoelectric Properties of the Quaternary Chalcogenide Compound Tl_2GaInSe_4 Crystal