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Formation of submicron n(+-)layers in commercial Pd-Si Schottky diodes with the active base region fabricated on epitaxial phosphorus-doped silicon, implanted with 300 keV hydrogen ions and thermally treated in the temperature range 20-450 degrees C, is studied. Standard C-V measurements and deep level transient spectroscopy were used. It is shown that formation of n(+)-layers at the end of projective range of ions was caused by producing of hydrogen-related donors of two types, one of them is bistable. The kinetics of their accumulation is described by the first-order reaction with the following values of parameters for bistable and not transforming H-donors: the activation energy Delta E-1 = 2.3 eV, the pre-exponential factor tau 01 = 9.1 x 10(-7) s, the ultimate concentration N-01 = (1 +/- 0.1) x 10(16) cm(-3); Delta E-2 = 1.4 eV, tau 02 = 4.2 x 10(-9) s, N-02 = (3 0.1) X 10(16) cm(-3). Correlation between processes of transformation of post-implantation radiation defects and hydrogen-related donors formation was identified.

Formation of Submicron n+-Layers in Silicon Implanted with H+-Ions

Formation of Submicron n⁺-Layers in Silicon Implanted with H⁺-Ions