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The diodes manufactured on the wafers of single-crystalline silicon uniformly doped with phosphorus are studied. The wafer resistivity was 90 Omega cm. Krypton ions are implanted to the side of the p(+)-region of diodes (energy 107 MeV, fluence Phi from 5 x 10(7) to 4 x 10(9) cm(-2)). It is shown that recovery charge Q(Gamma Gamma) is inversely proportional to the square root of the irradiation fluence value Phi. When the fluence increases, the part of the recovery charge Q(Gamma Gamma A) due to the high reverse conductance phase, decreases faster than the value Q(Gamma Gamma).

Effects of Fluences of Irradiation with 107 MeV Krypton Ions on the Recovery Charge of Silicon p+n-Diodes

Effects of Fluences of Irradiation with 107 MeV Krypton Ions on the Recovery Charge of Silicon p⁺n-Diodes