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Transverse magnetoresistance was studied in monocrystalline GaAs:Te doped above the equilibrium doping limit and annealed to partially deactivate donor impurities. It is shown that in a sample with partial deactivation of Te impurities, which exhibits structural fluctuations in microscale, both strong positive and some negative magnetoresistances arise, which are difficult to understand within the relaxation time approximation in degenerated homogeneous semiconductor. It is discussed that a consideration of the role of spatial fluctuations (in carrier concentration, conductivity, etc.), e.g. as proposed by Herring, allows for an understanding of positive component of magnetoresistance observed in the sample with a distinct microscopic structural disorder. With the aim to better understand the transport in GaAs:Te, a model material doped above the doping limit, we discuss both positive and negative components of measured magnetoresistance.

Studies of Magnetoresistance in GaAs:Te Crystals with Structural Disorder at Doping Limit