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The effect of In-flush technique application to the MBE-grown structure with self-assembled quantum dots is investigated in this work. The microphotoluminescence from structures with the In As/GaAs dots grown with and without the In-flush has been investigated. We focus our attention on "not fully developed" dots, which can be clearly distinguished in the spectrum. The dots have also been identified in the transmission electron microscopy analysis of the structures. The In-flush does not influence a broad energy range of those features. Instead we have found that the anisotropic exchange energy splitting of neutral excitons confined in those in the structure grown with In-flush is substantially lower that the splitting in the structure with no In-flush. This observation confirms that the In-flush leads not only to better uniformity of self-assembled quantum dots but also to reduction of lateral potential, anisotropy, which is believed to result in the neutral exciton splitting.

Quantum Confinement in InAs/GaAs Systems with Self-Assembled Quantum Dots Grown Using In-Flush Technique