English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Electron Transport in Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures in High Electric Fields K. Poželaa,∗, J. Požela, V. Jucienė, I.S. Vasil’evskii, G.B. Galiev, E.A. Klimov, A. Sužiedėlis, N. Žurauskienė, V. Stankevic, S. Kersulis and C. Paskevic Semiconductor Physics Institute, Center for Physical Sciences and Technology, Gostauto 11, Vilnius, Lithuania National Research Nuclear University MEPhI, Moscow 115409, Russia Institute of Microwave Semiconductor Electronics, Russian Academy of Sciences, Moscow 117105, Russia The following peculiarities of electron transport in In0.53Ga0.47As/In0.52Al0.48As quantum wells with δ-Si-doped In0.52Al0.48As barriers at high electric fields are discovered: (1) an enhancement of electron mobility by inserting the InAs phonon wall into the In0.53Ga0.47As/In0.52Al0.48As quantum well, as well as increasing the InAs content in the modulation-doped In0.8Ga0.2As/In0.7Al0.3As heterostructure; (2) a large decrease in electron mobility and a change of electron density with increasing electric field in the range of 1–4 kV/cm; (3) a magnetic field dependence of the threshold electric field for intervalley scattering of electrons; and (4) microwave current oscillations in high electric fields.