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Variations of recombination lifetime, with fluence of the reactor neutrons from 10(12) to 3 x 10(16) n/cm(2), in the magnetic field applied Czochralski grown Si samples are examined by the contactless transient techniques of the microwave probed photoconductivity and dynamic gratings. A nearly linear decrease in lifetime from few microseconds to about 200 ps within the examined range of neutron irradiation fluences was obtained. This dependence persists under relatively low (<= 80 degrees C) temperature heat treatments. Also, cross-sectional scans of lifetime depth-profiles were examined, which show rather high homogeneity of lifetime values within wafer thickness.

Investigation of Carrier Recombination in Si Heavily Irradiated by Neutrons