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Experimental and computation results based on chemical composition assessment of metal-organic chemical vapour deposition grown undoped GaN/AlxGa1-xN multiquantum well structures in the low composition limit of x = 0.07 and wide wells demonstrate composition fluctuations in the barrier layers which lead to large-scale nonuniformities and inequivalence of the different wells. As a consequence the experimental photoluminescence spectra at low temperature show a double peak structure indicative of well-width fluctuations by one lattice parameter (2 monolayers).

Influence of Well-Width Fluctuations on the Electronic Structure of GaN/AlxGa1-xN Multiquantum Wells with Graded Interfaces

Influence of Well-Width Fluctuations on the Electronic Structure of GaN/Al_xGa_1-xN Multiquantum Wells with Graded Interfaces