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We present the results of the electronic band structure study of Ge0.9Mn0.1Te epilayers, clean and modified in situ by deposition of manganese atoms. The sets of resonant photoemission spectra were measured for the photon energy range covering the energy of Mn 3p -> 3d transition (45 < hv < 60 eV). They were acquired for the clean surface of the Ge0.9Mn0.1Te sample, after evaporation of 0.5 monolayer Mn and after annealing (at 200 degrees C) inducing diffusion of Mn atoms into the Ge0.9Mn0.1Te crystal. The Mn 3d contribution to the emission from the valence band of Ge0.9Mn0.1Te was determined and the strength of interaction between Mn and its ligands was discussed.

Photoemission Study of Mn 3d Electrons in the Valence Band of Mn/GeMnTe