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Room temperature, continuous wave operation of InGaN multi-quantum wells laser diodes made by rf plasma assisted molecular beam epitaxy at 411 nm wavelength is demonstrated. The threshold current density and voltage were 4.2 kA/cm(2) and 5.3 V, respectively. High optical power output of 60 mW was achieved. The lifetime of these laser diodes exceeds 5 h with 2 mW of optical output power. The laser diodes are fabricated on low dislocation density bulk GaN substrates, at growth conditions which resembles liquid phase epitaxy. We demonstrate that relatively low growth temperatures (600-700 degrees C) pose no intrinsic limitations for fabrication of nitride optoelectronic components by plasma assisted molecular beam epitaxy.

High Power Continuous Wave Blue InAlGaN Laser Diodes Made by Plasma Assisted MBE