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The Raman spectra of TlGaxIn1-xS2 layered mixed crystals were studied for a, wide range of composition (0 <= x <= 1) at T = 50 K. The effect of crystal disorder on the line width broadening of the Raman-active modes are discussed. The asymmetry in the Raman line shape is analyzed for two interlayer and intralayer modes exhibiting one-mode behavior.

acta physica polonica. a

Low-Temperature Raman Scattering in TlGaxIn1-xS2Layered Mixed Crystals: Compositional Dependence of the Mode Frequencies and Line Shapes