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The magnetoresistance, anisotropy of ultrathin La0.83Sr0.17MnO3 films deposited on NdGaO3 substrate by metalorganic chemical vapour deposition technique was investigated. The electric-field-induced resistance change was studied up to electric fields of 10 kV/cm using ns duration electrical pulses. It was found that in ultrathin (< 10 nm) and thin (> 50 nm) films the origin of electric-field-induced resistance change is thermal. However, the films with thicknesses of about 20 nm, exhibit negative electric-field-induced resistance change, having a pure electronic nature. This effect is explained in terms of two-layer systems with imperfections located at the interface between the layers.

Magneto- and Electroresistance of Ultrathin Anisotropically Strained La-Sr-MnO Films