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Transport properties of 10 mum to 30 mum wide grain-boundary junctions ion-etched in thin colossal magnetoresistance La0.7Sr0.3MnO3 films deposited on a SrTiO3 bi-crystal were investigated. We have measured the current-voltage characteristics in the temperature range from 4.2 K to 300 K without applied magnetic field, as well as the magnetoresistance at magnetic fields up to +/-10 kOe directed parallel to the film surface, both perpendicular and parallel to the direction of current flow through the junctions. The investigated junctions have nonlinear current-voltage characteristics in this temperature range and consist of several magnetic domains. The maximum magnetoresistance (R(H) - R-max)/R-max, measured at 1 kOe was -17.6% at 4.1 K.

La0.7Sr0.3MnO3Thin-Film Grain-Boundary Junctions on a Bi-Crystal Substrate

La_0.7Sr_0.3MnO₃Thin-Film Grain-Boundary Junctions on a Bi-Crystal Substrate