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The electrical resistivity and Hall coefficient of LaFeAsO0.95F0.05polycrystalline samples were measured in pulsed magnetic fields up to m0H = 60T from room temperature to 1.5 K. The resistance of the normal state shows anegative temperature coefficient (dr/dT < 0) below 70 K for this composition,indicating insulating ground state in underdoped LaFeAsO system in contrast toheavily doped compound. The charge carrier density obtained from Hall effectcan be described as constant plus a thermally activated term with an energy gapDE = 630 K. Upper critical field, Hc2, estimated from resistivity measurements,exceeds 75 T with zero-field Tc = 26.3 K, suggesting an unconventional naturefor superconductivity.

Hall coefficient and Hc2 in underdoped LaFeAsO0.95F0.05