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The stoichiometric "111" iron-based superconductor, LiFeAs, has attactedgreat research interest in recent years. For the first time, we havesuccessfully grown LiFeAs thin film by molecular beam epitaxy (MBE) onSrTiO3(001) substrate, and studied the interfacial growth behavior byreflection high energy electron diffraction (RHEED) and low-temperaturescanning tunneling microscope (LT-STM). The effects of substrate temperatureand Li/Fe flux ratio were investigated. Uniform LiFeAs film as thin as 3quintuple-layer (QL) is formed. Superconducting gap appears in LiFeAs filmsthicker than 4 QL at 4.7 K. When the film is thicker than 13 QL, thesuperconducting gap determined by the distance between coherence peaks is about7 meV, close to the value of bulk material. The ex situ transport measurementof thick LiFeAs film shows a sharp superconducting transition around 16 K. Theupper critical field, Hc2(0)=13.0 T, is estimated from the temperaturedependent magnetoresistance. The precise thickness and quality control ofLiFeAs film paves the road of growing similar ultrathin iron arsenide films.

Molecular Beam Epitaxy Growth of Superconducting LiFeAs Film on SrTiO3(001) Substrate