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Author details V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauky 41, Kiev 03680, Ukraine. Institute for Nanoscience and Engineering, University of Arkansas, West Dickson 731, Fayetteville, AR 72701, USA. Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska str. 29/37, 01-142 Warsaw, Poland. Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, PL-02-668 Warsaw, Poland.

Erratum to: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire