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Resistive switching memory cross-point arrays with TiN/HfO  x  /AlO  y  /Pt structure were fabricated. The bi-layered resistive switching films of 5-nm HfO  x   and 3-nm AlO  y   were deposited by atomic layer deposition (ALD). Excellent device performances such as low switching voltage, large resistance ratio, good cycle-to-cycle and device-to-device uniformity, and high yield were demonstrated in the fabricated 24 by 24 arrays. In addition, multi-level data storage capability and robust reliability characteristics were also presented. The achievements demonstrated the great potential of ALD-fabricated HfO  x  /AlO  y   bi-layers for the application of next-generation nonvolatile memory.

High-performance HfO x /AlO y -based resistive switching memory cross-point array fabricated by atomic layer deposition