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The outstanding electrical and mechanical properties of graphene make it veryattractive for several applications, Nanoelectronics above all. However areproducible and non destructive way to produce high quality, large-scale area,single layer graphene sheets is still lacking. Chemical Vapour Deposition ofgraphene on Cu catalytic thin films represents a promising method to reach thisgoal, because of the low temperatures (T < 900 Celsius degrees) involved duringthe process and of the theoretically expected monolayer self-limiting growth.On the contrary such self-limiting growth is not commonly observed inexperiments, thus making the development of techniques allowing for a bettercontrol of graphene growth highly desirable. Here we report about the localablation effect, arising in Raman analysis, due to the heat transfer induced bythe laser incident beam onto the graphene sample.

Laser-induced etching of few-layer graphene synthesized by Rapid-Chemical Vapour Deposition on Cu thin films