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This paper investigates the crystal structure and optical absorption of Ge-doped Nb-oxide (Nb-Ge-O) thin films prepared by RF sputtering. A wide-gap material, Nb 2 O 5 , is selectively produced as a matrix to disperse Ge nanocrystals through compositional optimization with Ge chip numbers and oxygen ratio in argon. The optical-absorption spectra are obviously shifted to visible (vis) and near-infrared (NIR) regions, suggesting that a composite thin film with Ge nanocrystals dispersed in Nb 2 O 5  matrix exhibits quantum-size effects. Accordingly, the two valuable characteristics of the Nb 2 O 5  matrix and the vis-NIR absorption are found to be retained simultaneously in Nb-Ge-O thin films.

Formation of Nb2O5 matrix and Vis-NIR absorption in Nb-Ge-O thin film