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Thermochromic VO 2  thin films have successfully been grown on SiO 2 -coated float glass by reactive DC and pulsed-DC magnetron sputtering. The influence of substitutional doping of V by higher valence cations, such as W, Mo, and Nb, and respective contents on the crystal structure of VO 2  is evaluated. Moreover, the effectiveness of each dopant element on the reduction of the intrinsic transition temperature and infrared modulation efficiency of VO 2  is discussed. In summary, all the dopant elements--regardless of the concentration, within the studied range-- formed a solid solution with VO 2 , which was the only compound observed by X-ray diffractometry. Nb showed a clear detrimental effect on the crystal structure of VO 2 . The undoped films presented a marked thermochromic behavior, specially the one prepared by pulsed-DC sputtering. The dopants effectively decreased the transition of VO 2  to the proximity of room temperature. However, the IR modulation efficiency is markedly affected as a consequence of the increased metallic character of the semiconducting phase. Tungsten proved to be the most effective element on the reduction of the semiconducting-metal transition temperature, while Mo and Nb showed similar results with the latter being detrimental to the thermochromism.

Synthesis and characterization of VO2-based thermochromic thin films for energy-efficient windows