Dependence of Electron Beam Diameter, Electron Energy, Resist Thickness and Resist Type for Forming Nano−sized Dot Arrays in EB Lithography by Using Monte Carlo Simulation. | Zendy

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Dependence of Electron Beam Diameter, Electron Energy, Resist Thickness and Resist Type for Forming Nano−sized Dot Arrays in EB Lithography by Using Monte Carlo Simulation.

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