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Lanthanum titanium oxide thin films are sometimes used in high-temperature environments. Therefore, it is worth paying attention to the thermal stability of the La2Ti2O7 films. La2Ti2O7 target was made through traditional solid-state reaction way to study the effect of substrate temperature on the characteristics of LTO thin films; A Set of lanthanum titanium oxide thin films has been deposited on to Si (100) substrate through Pulsed laser deposition at different annealing temperatures. The results of X-ray diffraction indicated that the prepared LTO thin films at temperatures up to 700°C are amorphous, while the profilometer Dektak-XT conducted to determine the thickness and roughness of La2Ti2O7 films. The obtained result pointed that the thin film thickness decreased by increasing annealing temperature linearly, and the roughness was inversely proportioning to the increasing of substrate temperature. The value of the lowest roughness equal to 12.28 nm for the thinner film with a thickness of 253.46 nm, while the highest roughness was found to be 14.74 nm for the thicker film at 323.05 nm, which were deposited at 700°C and 500°C respectively, therefore it has been remarked that the annealing temperature influenced the morphology, thickness, and roughness of the LTO thin film.

american journal of nanoscience

The Characterizations of La&lt;sub&gt;2&lt;/sub&gt;Ti&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;7&lt;/sub&gt; Thin Films Deposited by Pulsed Laser Deposition at Different Annealing Temperatures