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This article analyzed and studied the concentration mechanism of metal impurities of ULSI multilayered wiring CMP in the special-purpose nanometer SiO2 grinding compound in the substrate chip surface and the process of purification with chelating agent; we also obtained the remarkable effect and the effective application in the microelectron component preparation

Control Effect of Nanometer SiO2Hydrosol on Alloy Impurity in CMP Process of ULSI

Control Effect of Nanometer SiO₂Hydrosol on Alloy Impurity in CMP Process of ULSI