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Although a great deal of progress has been made for metal-oxide-semiconductor fieldeffect transistors (MOSFETs) with high-k gate dielectrics, it has been experimentally observed that the effective mobility strongly degrades (1-3). The mechanism of the mobility degradation is not clearly understood so far. In order to explain the mobility degradation mechanism, there are several models proposed for ultrathin MOSFETs with high-k gate stacks (4-10). For the ultrathin MOSFETs with high-k dielectrics, it has been suggested that the mobility degradation might be caused by some phenomena that are specific to the high-k dielectrics, such as remote Coulomb scattering, remote surface roughness (RSR) scattering, and phonon scattering.

Effect of Remote Surface Roughness Scattering on Electron Mobility in MOSFETs with High-k Dielectrics