English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Tools annual

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Presents the access of premium content as premium feature

Premium Content

Global: Zendy Plus annual

Global: Zendy Free Plan

It has been reported that the work function of nitrided molybdenum (MoN) can be modulated by the atomic ratio of N/Mo and is suitable for gate material of complementary metal oxide semiconductor devices. In this work, we investigated the characteristics of MoN x prepared by reactively sputtering deposition from the gate electrode point of view. The main phase of the MoN x films is MoN(200). As the N/Mo ratio increases, the microstructure of MoN x film tends to be amorphous-like and the resistivity increases. After high-temperature annealing, the phase remains stable and grain size increases slightly. The HfO 2 film has better immunity to sputtering damage than SiO 2 film; therefore, the sputtering deposition method could be a choice of metal gate deposition as HfO 2 -based dielectric is used. The work function of MoN x increases with the increase of nitrogen content and tends to saturate at the valence band of Si. No Fermi-pinning effect is observed on HfO 2 film. The work function and thermal stability of MoN x show good thermal stability on both SiO 2 and HfO 2 films up to 800°C at least. All of these results indicate that MoN is a good candidate of gate electrode for p-type metal oxide semiconductor field effect transistors (pMOSFETs) or fully depleted SOI devices.

Investigation of Molybdenum Nitride Gate on SiO[sub 2] and HfO[sub 2] for MOSFET Application