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We report the intrinsic critical current density (Jc0) in current-inducedmagnetization switching and the thermal stability factor (E/kBT, where E, kB,and T are the energy potential, the Boltzmann constant, and temperature,respectively) in MgO based magnetic tunnel junctions with aCo40Fe40B20(2nm)/Ru(0.7-2.4nm)/Co40Fe40B20(2nm) synthetic ferrimagnetic (SyF)free layer. We show that Jc0 and E/kBT can be determined by analyzing theaverage critical current density as a function of coercivity using theSlonczewski's model taking into account thermal fluctuation. We find that highantiferromagnetic coupling between the two CoFeB layers in a SyF free layerresults in reduced Jc0 without reducing high E/kBT.Comment: 16 pages, 4 figures. Jpn. J. Appl. Phys., in pres

Current-Induced Magnetization Switching in MgO Barrier Based Magnetic Tunnel Junctions with CoFeB/Ru/CoFeB Synthetic Ferrimagnetic Free Layer