English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We investigated dependence of tunnel magnetoresistance effect inCoFeB/MgO/CoFeB magnetic tunnel junctions on Ar pressure during MgO-barriersputtering. Sputter deposition of MgO-barrier at high Ar pressure of 10 mTorrresulted in smooth surface and highly (001) oriented MgO. Using this MgO as atunnel barrier, tunnel magnetoresistance (TMR) ratio as high as 355% at roomtemperature (578% at 5K) was realized after annealing at 325 C or higher, whichappears to be related to a highly (001) oriented CoFeB texture promoted by thesmooth and highly oriented MgO. Electron-beam lithography defineddeep-submicron MTJs having a low-resistivity Au underlayer with thehigh-pressure deposited MgO showed high TMR ratio at low resistance-areaproduct (RA) below 10 ohm-um^2 as 27% at RA = 0.8 ohm-um^2, 77% at RA = 1.1ohm-um^2, 130% at RA = 1.7 ohm-um^2, and 165% at RA = 2.9 ohm-um^2.Comment: 14 pages, 5 figure

Dependence of Tunnel Magnetoresistance in MgO Based Magnetic Tunnel Junctions on Ar Pressure during MgO Sputtering