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We report a numerical analysis of Anderson localization in a model of a dopedsemiconductor. The model incorporates the disorder arising from the randomspatial distribution of the donor impurities and takes account of theelectron-electron interactions between the carriers using density functionaltheory in the local density approximation. Preliminary results suggest that themodel exhibits a metal-insulator transition.

Effect of electron-electron interaction near the metal-insulator transition in doped semiconductors studied within the local density approximation