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New model of the pinning potential barrier in multi-layered HTcsuperconductors has been presented, basing on geometrical approach to thecapturing interaction of pancake type vortices with nano-scale defects. Usingthis model the transport current flow phenomena in these materials, especiallycurrent-voltage characteristics and critical current density, have beenconsidered. Details of theoretical analysis are given, including derivation ofbasic mathematical equations describing the potential barrier in the functionof transport current density and initial position of captured pancake vortex.Computer simulation has been performed then of influence of transport currentamplitude on potential barrier height for various sizes of pinning centers andinitial pancake vortex position as well as influence of fast neutronsirradiation on critical current of HTc layered superconductor.

New model of the pinning potential barrier in HTc superconductors