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We find an analytical expression for the conductance of a single electrontransistor in the regime when temperature, level spacing, and charging energyof a grain are all of the same order. We consider the model of equidistantenergy levels in a grain in the sequential tunneling approximation. In the caseof spinless electrons our theory describes transport through a dot in thequantum Hall regime. In the case of spin-1/2 electrons we analyze the lineshape of a peak, shift in the position of the peak's maximum as a function oftemperature, and the values of the conductance in the odd and even valleys.Comment: RevTex, 13 pages, 13 figure

COULOMB BLOCKADE OSCILLATIONS OF CONDUCTANCE AT FINITE ENERGY LEVEL SPACING IN A QUANTUM DOT