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The process of liquid silicon infiltration is investigated for channels withradii from $0.25$ to $0.75$ [mm] drilled in compact carbon preforms. Theadvantage of this setup is that the study of the phenomenon results to besimplified. For comparison purposes, attempts are made in order to work out aframework for evaluating the accuracy of simulations. The approach relies ondimensionless numbers involving the properties of the surface reaction. Itturns out that complex hydrodynamic behavior derived from second Newton law canbe made consistent with Lattice-Boltzmann simulations. The experiments giveclear evidence that the growth of silicon carbide proceeds in two differentstages and basic mechanisms are highlighted. Lattice-Boltzmann simulationsprove to be an effective tool for the description of the growing phase. Namely,essential experimental constraints can be implemented. As a result, theexisting models are useful to gain more insight on the process of reactiveinfiltration into porous media in the first stage of penetration, i.e. up topore closure because of surface growth. A way allowing to implement theresistance from chemical reaction in Darcy law is also proposed.

Surface growth for molten silicon infiltration into carbon millimeter-sized channels: Lattice-Boltzmann simulations, experiments and models