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Slow oscillations (SlO) of the in-plane magnetoresistance with a frequencyless than 4 T are observed in the rare-earth tritellurides and proposed as aneffective tool to explore the electronic structure in various stronglyanisotropic quasi-two-dimensional compounds. Contrary to the usualShubnikov-de-Haas oscillations, SlO originate not from small Fermi-surfacepockets, but from the entanglement of close frequencies due to a finiteinterlayer transfer integral, either between the two Te planes forming abilayer or between two adjacent bilayers. From the observed angular dependenceof the frequency and the phase of SlO we argue that they originate from thebilayer splitting rather than from the Fermi-surface warping. The SlO frequencygives the value of the interlayer transfer integral $\approx 1$ meV forTbTe$_3$ and GdTe$_3$.

Bilayer splitting versus Fermi-surface warping as an origin of slow oscillations of in-plane magnetoresistance in rare-earth tritellurides