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The dependences of the transport scattering time {\tau}t, quantum lifetime{\tau}q, and their ratio {\tau}t/{\tau}q on the density ne of the electron gasin modulation-doped single GaAs quantum wells with AlAs/GaAs short-periodsuper-lattice barriers are investigated. The experimental dependences areexplained in terms of electron scattering by remote ionized donors with aneffective two-dimensional concentration n*R and background impurities with athree-dimensional concentration nB. An expression for n*R(ne) is obtainedincluding the contribution of X-valley electrons localized in AlAs layers tothe suppression of scattering by the random potential of remote donors. It isshown that the experimentally observed abrupt increase in {\tau}t and {\tau}qwith an increase in ne above a certain critical value nec is related to adecrease in n*R. It is established that the drop in {\tau}t/{\tau}q observedfor electron densities ne > nec occurs because scattering by the randompotential of background impurities in this two-dimensional system with adecrease in n*R limits an increase in {\tau}t more considerably than anincrease in {\tau}q.

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Dependences of the Transport Scattering Time and Quantum Lifetime on the  Two-Dimensional Electron Gas Density in Modulation-Doped Single GaAs Quantum  Wells with AlAs/GaAs Short-Period Superlattice Barriers