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The mid-infrared (MIR) spectral range, pertaining to important applicationssuch as molecular 'fingerprint' imaging, remote sensing, free spacetelecommunication and optical radar, is of particular scientific interest andtechnological importance. However, state-of-the-art materials for MIR detectionare limited by intrinsic noise and inconvenient fabrication processes,resulting in high cost photodetectors requiring cryogenic operation. We reportblack arsenic-phosphorus-based long wavelength infrared photodetectors withroom temperature operation up to 8.2 um, entering the second MIR atmospherictransmission window. Combined with a van der Waals heterojunction, roomtemperature specific detectivity higher than 4.9*10^9 Jones was obtained in the3-5 um range. The photodetector works in a zero-bias photovoltaic mode,enabling fast photoresponse and low dark noise. Our van der Waalsheterojunction photodector not only exemplify black arsenic-phosphorus as apromising candidate for MIR opto-electronic applications, but also pave the wayfor a general strategy to suppress 1/f noise in photonic devices.

Room-temperature high detectivity mid-infrared photodetectors based on black arsenic phosphorus