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Epitaxially-grown quantum well and quantum dot solar cells suffer from weaklight absorption, strongly limiting their performance. Light trapping based onoptical resonances is particularly relevant for such devices to increase lightabsorption and thereby current generation. Compared to homogeneous media, theposition of the quantum layers within the device is an additional parameterthat can strongly influence resonant absorption. However, this effect has sofar received little attention from the photovoltaic community. In this work, wedevelop a theoretical framework to evaluate and optimize resonant lightabsorption in a thin slab with multiple quantum layers. Using numericalsimulations, we show that the position of the layers can make the differencebetween strong absorption enhancement and completely suppressed absorption, andthat an optimal position leads to an absorption enhancement twice larger thanaverage. We confirm these results experimentally by measuring the absorptionenhancement from photoluminescence spectra in InAs/GaAs quantum dot samples.Overall, this work provides an additional degree of freedom to substantiallyimprove absorption, encouraging the development of quantum wells and quantumdots-based devices such as intermediate-band solar cells.

Resonant absorption in multilayer quantum-well and quantum-dot solar cells