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. We report the critical factors that control the geometry of silicon nanostructures produced by metal-assisted chemical etching (MacEtch) using self-assembled islands from an ultrathin film of gold. We have conducted a systematic study of the process parameters that control the geometry of the metal structures and the resulting etched nanostructures. Compared to prior reports, which have focused on the crystal orientation and solution stoichiometry, our study finds that the anisotropy of the etched nanostructures is primarily controlled by the deposited metal geometry, while solution stoichiometry and crystal orientation play relatively minor roles. Using an optimized self-assembled geometry and etch process, we demonstrate what we believe is the highest aspect ratio to date (greater than 5000∶1) for high density top-down etched silicon nanostructures. These structures, which we refer to as silicon nanowalls, are in the size regime where quantum confinement effects could potentially be exploited for next-generation optoelectronic components and devices.

Fabrication of ultrahigh aspect ratio silicon nanostructures using self-assembled gold metal-assisted chemical etching