English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

A strong candidate device for use in high-efficiency and high-density power converters is the SiC bipolar junction transistor, which requires a continuous gate (base) current to maintain its on-state. A base driver circuit with regenerative collector current feedback using a current transformer, and a negative off-state base-emitter voltage is presented in this article. The off-state base-emitter voltage required to prevent simultaneous conduction of a commercially available device when subjected to dv/dt's is assessed. The device is then utilized in a three-phase dc-to-ac power converter where the efficacy of using the proposed base driver is evaluated. The off-state base-emitter voltage used is informed by the dv/dt tests. The converter is supplied from a 600-V dc rail, switches at 50 kHz and supplies a 4.1-kW load at a modulation index of 0.9. An efficiency of 97.4% was measured.

ieee transactions on industrial electronics

Evaluation of the <sc>off</sc>-State Base-Emitter Voltage Requirement of the SiC BJT With a Regenerative Proportional Base Driver Circuit and Their Application in an Inverter

Evaluation of the off-State Base-Emitter Voltage Requirement of the SiC BJT With a Regenerative Proportional Base Driver Circuit and Their Application in an Inverter