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SiC MOSFETs are applied to constitute a three-phase, 5-kW LLC series resonant dc/dc converter with isolation transformers. A switching frequency of around 200 kHz for the transistors successfully reduces the volume of these isolation transformers, whereas insulated-gate bipolar transistors (IGBTs) are not capable of achieving such a high switching speed. The high-voltage tolerance of SiC MOSFETs, 1200 V, enables increasing the input voltage up to 600 V. High-voltage tolerance, on the other hand, is not compatible with low on-resistance for Si MOSFETs. A three-phase circuit topology is used to achieve up to 5 kW of power capacity for the converter and reduce per-phase current at the same time. Current-balancing transformers among these three phases effectively suppress a maximum peak current from arising in the circuit, a technique that miniaturizes the input and output capacitances. The conversion efficiency of the converter reaches 97.6% at 5-kW operation.

Three-Phase LLC Series Resonant DC/DC Converter Using SiC MOSFETs to Realize High-Voltage and High-Frequency Operation