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We experimentally demonstrate the operation of a Josephson magnetic random access memory unit cell, built with a Ni<sub>80</sub> Fe<sub>20</sub>/Cu/Ni pseudo-spin-valve Josephson junction with Nb electrodes and an integrated readout superconducting quantum interference device in a fully planarized Nb fabrication process. We show that the parallel and antiparallel memory states of the spin valve can be mapped onto a junction equilibrium phase of either zero or &#x03C0; by appropriate choice of the ferromagnet thicknesses, and that the magnetic Josephson junction can be written to either a zero-junction or &#x03C0;-junction state by application of write fields of approximately 5 mT. This letter represents a first step toward a scalable, dense, and power-efficient cryogenic memory for superconducting high-performance digital computing.

Experimental Demonstration of a Josephson Magnetic Memory Cell With a Programmable $\pi$-Junction