English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

High-performance InGaAs gate-all-around (GAA) nanowire MOSFETs with channel length (Lch) down to 20 nm are fabricated by integrating a higher k LaAlO3-based gate-stack with an equivalent oxide thickness of 1.2 nm. It is found that inserting an ultrathin (0.5 nm) Al2O3 interfacial layer between the higher k LaAlO3 and InGaAs can significantly improve the interface quality and reduce device variation. As a result, a record low subthreshold swing of 63 mV/dec is demonstrated at sub-80-nm Lch for the first time, making InGaAs GAA nanowire devices a strong candidate for future low-power transistors.

Variability Improvement by Interface Passivation and EOT Scaling of InGaAs Nanowire MOSFETs